Bias-stress effect causing undesirable charge trapping and performance degradation are considered huge obstacles for high-performance organic transistors. Besides the extra effort to suppress it, it is innovative to use the synergy of bias-stress effect and photoexcitation to pre-regulate traps and effectively regulate the response and selectivity of organic transistor to NO and NH3. The transistor-type chemical sensor with bias-stress instability and photo response was fabricated based on a low-crystallinity polymer semiconductor, indacenodithiophene-benzothiadiazole (IDTBT), and unmodified SiO2 dielectric layer. Sensors operated in pre-stressed dark conditions have more hole traps and improve the response to oxidizing NO, which enhanced 2 times than that under light conditions. Under light conditions, the removal of hole traps via photoexcitation facilitates the regeneration of hole trap by reducing NH3, the corresponding response is 1.4 times that of the pre-stressed dark condition.

中文翻译：

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通过偏应力效应和光激发的协同作用调节有机晶体管的 NO 和 NH₃ 传感

导致不良电荷捕获和性能下降的偏置应力效应被认为是高性能有机晶体管的巨大障碍。除了付出额外的努力来抑制它之外，利用偏置应力效应和光激发的协同作用来预调控陷阱，有效调控有机晶体管对NO和NH3的响应和选择性，具有创新性。具有偏置应力不稳定性和光响应的晶体管型化学传感器是基于低结晶度聚合物半导体、茚并二噻吩苯并噻二唑（IDTBT）和未改性的SiO2介电层制造的。在预应力黑暗条件下工作的传感器具有更多的空穴陷阱，提高了对氧化NO的响应，比光照条件下增强了2倍。在光照条件下，通过光激发去除空穴陷阱，通过还原NH3促进空穴陷阱的再生，相应的响应是预应力暗条件下的1.4倍。