In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5 mV dec−1 and an ON/OFF current ratio of ≈5 × 106 for both the n‐ and p‐channel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an ON current ratio of 1.02 for the n‐ and p‐channel modes. Moreover, the bidirectional synaptic weight updates of binarized spike‐timing‐dependent plasticity learning are successfully performed in a single transistor. This study demonstrates the potential of a triple‐gated NS transistor for achieving compact synaptic arrays in large‐scale silicon‐based neuromorphic computing systems.

中文翻译：

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具有可重构存储特性的三栅硅纳米片晶体管的双向突触操作

在这项研究中，一个带有 ap 的三栅晶体管+-在+硅纳米片（NS）被提出作为单个突触器件，并利用可重构存储特性实现双向突触功能。三栅 NS 晶体管具有陡峭的开关和双稳态特性，亚阈值摆幅低于 5 mV dec−1开/关电流比为 ≈5 × 106对于 n 和 p 通道模式。该晶体管表现出电对称的可重构存储器特性，n 和 p 沟道模式的导通电流比为 1.02。此外，二值化尖峰时序依赖性可塑性学习的双向突触权重更新在单个晶体管中成功执行。这项研究证明了三栅 NS 晶体管在大规模硅基神经形态计算系统中实现紧凑突触阵列的潜力。