SummaryDual‐directional SCR (DDSCR) with bidirectional discharge paths and high robustness is widely employed for electrostatic discharge (ESD) protection in integrated circuits. However, the design and simulation of on‐chip ESD protection circuits for dual‐directional paths remain challenging due to a lack of relevant device models. This paper designs a Gate‐Controlled Dual‐Direction SCR (GDDSCR) for providing electrostatic discharge (ESD) protection in industry‐level temperature sensors. Furthermore, a new behavioral model is developed based on the GDDSCR for simulating ESD protection circuits along both forward and reverse paths. Experimental results demonstrate that the GDDSCR behavioral model accurately reproduces the IV characteristics observed in bidirectional transmission line pulse (TLP) tests. In addition, the equivalent circuit based on human body model (HBM) is used for transient simulation, and the accuracy of the model is verified by relevant HBM experiments. The proposed model allows the direct extraction of parameters such as trigger voltage (Vt1), holding voltage (Vh), and on‐state resistance (Ron) through TLP testing, facilitating easy application to other types of DDSCR devices.

中文翻译：

---

片上ESD保护栅控双向可控硅特性参数模型及电路级仿真

摘要具有双向放电路径和高鲁棒性的双向 SCR (DDSCR) 被广泛应用于集成电路中的静电放电 (ESD) 保护。然而，由于缺乏相关器件模型，双向路径片上 ESD 保护电路的设计和仿真仍然具有挑战性。本文设计了一种门控双向 SCR (GDDSCR)，用于为工业级温度传感器提供静电放电 (ESD) 保护。此外，基于 GDDSCR 开发了一种新的行为模型，用于模拟正向和反向路径上的 ESD 保护电路。实验结果表明，GDDSCR 行为模型准确地再现了双向传输线脉冲 (TLP) 测试中观察到的 IV 特性。此外，采用基于人体模型（HBM）的等效电路进行瞬态仿真，并通过相关HBM实验验证了模型的准确性。所提出的模型允许直接提取参数，例如触发电压（Vt1），保持电压（VH）和通态电阻（罗恩）通过TLP测试，便于轻松应用于其他类型的DDSCR装置。