Herein, high‐resistivity GaN is studied for use as an epitaxial substrate in lateral power devices. Fe‐, C‐, Mn‐, and Zn‐doped GaN monocrystals have high resistivity at a doping concentration of ≈1 × 1018 cm−3. However, a low doping concentration is preferred for growing GaN monocrystals; therefore, other dopants for GaN that yield high resistivity at a doping concentration less than 1 × 1018 cm−3 must be identified. Herein, NiCl2 is used as a precursor to grow Ni‐doped GaN monocrystals on GaN substrates via hydride vapor‐phase epitaxy. Two Ni‐doped GaN substrates with Ni concentrations corresponding to 2.7 × 1017 and 2.9 × 1018 cm−3 are obtained by varying the partial pressure of NiCl2. The resistivity of Ni‐doped GaN monocrystals is measured as a function of temperature using Hall effect measurements. The GaN monocrystals doped with 2.7 × 1017 cm−3 of Ni have a higher resistivity than those doped with 2.9 × 1018 cm−3 of Ni at 600–900 K. Charge‐neutrality calculations have shown that the depth of the Ni acceptor level in GaN is 1.4–1.5 eV, indicating that Ni‐doped GaN monocrystals have high resistivity owing to the deep acceptor level of Ni.

中文翻译：

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氢化物气相外延实现高阻镍掺杂GaN晶体

在此，研究了高电阻率 GaN 用作横向功率器件的外延衬底。Fe、C、Mn、Zn 掺杂 GaN 单晶在掺杂浓度约 1 × 10 时具有高电阻率18厘米−3。然而，低掺杂浓度对于生长GaN单晶是优选的；因此，其他 GaN 掺杂剂在掺杂浓度低于 1 × 10 时可产生高电阻率18厘米−3必须被识别。在此，氯化镍2用作前驱体，通过氢化物气相外延在 GaN 衬底上生长 Ni 掺杂的 GaN 单晶。两个 Ni 掺杂 GaN 衬底，Ni 浓度对应于 2.7 × 1017 号和 2.9 × 1018厘米−3通过改变 NiCl 的分压获得2。使用霍尔效应测量将 Ni 掺杂 GaN 单晶的电阻率测量为温度的函数。掺杂2.7×10的GaN单晶17 号厘米−3Ni的电阻率高于掺杂2.9×10的电阻率18厘米−3Ni在600-900 K下的变化。电荷中性计算表明，GaN中Ni受主能级的深度为1.4-1.5 eV，表明Ni掺杂的GaN单晶由于Ni受主能级较深而具有高电阻率。