Abstract

The electroluminescent characteristics of the InAs/InAs_1–ySb_y/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.

中文翻译：

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具有不对称电子约束的 InAs/InAsSb/InAsSbP 异质结构中的受激发射

摘要

研究了高 InSb摩尔分数 InAs/InAs _{1– y} Sb _y /InAsSbP 不对称发光二极管异质结构在有源区 ( y > 0.09) 在 4.2–300 K 温度范围内的电致发光特性。在低温（ T < 30 K）下，在 4.1–4.2 μm 波长范围内实现了受激发射。研究发现，电致发光光谱是由II型异质界面附近载流子辐射复合的不同通道的贡献叠加而形成的。考虑了随着三元固溶体中InSb含量的增加，II型InAsSb/InAsSbP异质结的质量对辐射界面转变的影响。