As the most promising lead-free perovskite, tin-based perovskite has attracted much attention due to its suitable bandgap and low toxicity. However, many defects (tin vacancy defects caused by Sn²⁺ oxidation to Sn⁴⁺, grain boundary defects and point defects) in tin-based perovskite lead to serious losses in device efficiency. Here, a universal and effective doping strategy is delivered to improve the structure and optoelectronic properties of tin-based perovskite films through 2,8-dibromo-dibenzothiophene-S,S-dioxide (BrDS) doping. The introduction of BrDS can effectively inhibit the oxidation of Sn²⁺ and passivate grain boundary defects and point defects in the perovskite films. The tin-based perovskite film doped with BrDS exhibits higher carrier lifetime and crystal quality. As a result, the BrDS-doped device achieves a power conversion efficiency of 14.98% with a certified efficiency of 14.36%, which is one of the highest PCEs among all values reported to date for tin-based PSCs. In addition, the BrDS-doped PSC devices exhibit significantly improved long-term stability and improved operational stability in a N₂ atmosphere. This work represents a noteworthy step towards manufacturing efficient and stable tin-based PSCs.

中文翻译：

---

采用 2,8-二溴二苯并噻吩-S,S-二氧化物的增材工程使锡基钙钛矿太阳能电池具有 14.98% 的功率转换效率

作为最有前途的无铅钙钛矿，锡基钙钛矿由于其合适的带隙和低毒性而备受关注。然而，锡基钙钛矿中的许多缺陷（由Sn ²⁺氧化成Sn ⁴⁺引起的锡空位缺陷、晶界缺陷和点缺陷）导致器件效率严重损失。在此，提出了一种通用且有效的掺杂策略，通过 2,8-二溴二苯并噻吩-S，S-二氧化物（BrDS）掺杂来改善锡基钙钛矿薄膜的结构和光电性能。 BrDS的引入可以有效抑制Sn ²⁺的氧化，钝化钙钛矿薄膜中的晶界缺陷和点缺陷。掺杂BrDS的锡基钙钛矿薄膜表现出更高的载流子寿命和晶体质量。结果，掺杂 BrDS 的器件实现了 14.98% 的功率转换效率，认证效率为 14.36%，这是迄今为止报道的锡基 PSC 的所有值中最高的 PCE 之一。此外，BrDS掺杂的PSC器件表现出显着改善的长期稳定性以及在N ₂气氛中改善的操作稳定性。这项工作代表着朝着制造高效、稳定的锡基 PSC 迈出了值得注意的一步。