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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes with Avalanche Capability
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-13 , DOI: 10.1109/led.2024.3377532 James Spencer Lundh 1 , Alan G. Jacobs 2 , Prakash Pandey 3 , Tolen Nelson 3 , Daniel G. Georgiev 3 , Andrew D. Koehler 2 , Raghav Khanna 3 , Marko J. Tadjer 2 , Karl D. Hobart 2 , Travis J. Anderson 2
中文翻译：
具有雪崩能力的垂直 GaN pin 二极管中稳健的混合边缘端接结构的实验验证
更新日期：2024-03-13
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-13 , DOI: 10.1109/led.2024.3377532 James Spencer Lundh 1 , Alan G. Jacobs 2 , Prakash Pandey 3 , Tolen Nelson 3 , Daniel G. Georgiev 3 , Andrew D. Koehler 2 , Raghav Khanna 3 , Marko J. Tadjer 2 , Karl D. Hobart 2 , Travis J. Anderson 2
Affiliation
中文翻译：
具有雪崩能力的垂直 GaN pin 二极管中稳健的混合边缘端接结构的实验验证
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