The impact of electric field application in the charged domain wall (DW) region on the performance of DW devices remains elusive. Here, we present our observations of substantial charge injection occurring in an artificially created charged DW region. Rapid charge injection coincides with polarization switching, contributing to the transient current collected for the integration of polarization-voltage hysteresis loops. Subsequently, a gradual injection of charges persists under externally applied voltages, diffusing into the thin film from the DW region to screen the space defect dipoles and effectively suppressing the imprint field. The process of charge injection proves reversible and is notably more pronounced in aged ferroelectric thin films, as evidenced in planar BiFeO nanodevices where the charge injection amount is five orders of magnitude higher than charges generated from polarization switching. This work constitutes a significant contribution to understanding the intricate process of charge injection and its influence on charged DW.

中文翻译：

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人工创建的带电畴壁区域中的可逆电荷注入

带电畴壁 (DW) 区域的电场应用对 DW 器件性能的影响仍然难以捉摸。在这里，我们展示了我们对人工创建的带电 DW 区域中发生的大量电荷注入的观察结果。快速电荷注入与极化切换同时发生，有助于收集瞬态电流以集成极化电压磁滞回线。随后，在外部施加的电压下持续逐渐注入电荷，从DW区域扩散到薄膜中以屏蔽空间缺陷偶极子并有效抑制压印场。电荷注入过程被证明是可逆的，并且在老化的铁电薄膜中尤其明显，如平面 BiFeO 纳米器件中所证明的那样，其中电荷注入量比极化切换产生的电荷高五个数量级。这项工作对理解电荷注入的复杂过程及其对带电 DW 的影响做出了重大贡献。