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The effect of Te solution volume on the growth of CdZnTe crystals by Traveling Heater Method
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-02-29 , DOI: 10.1016/j.jcrysgro.2024.127647
Jijun Zhang , Yongwu Qi , Wanping Liu , Jiongjiong Wei , Hao Liu , Xiaoyan Liang , Linjun Wang

Nowadays, Traveling Heater Method (THM) is demonstrated to be one of the most promising ways to grow high-quality CdZnTe (CZT) crystals. The THM is essentially a melt-solution growth method, in which the CZT solute diffuses from the dissolution interface to the growth interface in the Te solution and deposits on the CZT seed. In this work, the effects of Te solution volumes on the structure of CZT solute, growth interface, defects and electrical properties of CZT crystals grown by THM were investigated. CZT crystals (φ30 × 80 mm) were grown by THM with different volumes of Te solution ( = 1.5, 1, and 0.5, where is the height and is the diameter of Te solution). The distribution and morphology of CZT solutes in different Te solutions were investigated, which shown that the large-sized CZT solute in Te solution is more conducive to single-crystal growth and the growth temperature is calculated to be 806–809 °C. The growth interfaces correlated with Te inclusions in the as-grown CZT crystals were revealed, which shown that the CZT crystal grown with Te solution of = 1 has a planar growth interface and the lowest Te concentration. The size of Te inclusion is mainly in the range of 3–10 μm in all CZT crystals grown by THM. The IR transmittance of different CZT wafers was conducted in the range of 4000–500 cm. The resistivity and energy spectra of CZT detectors under Am irradiation were measured at room temperature. The experiment results demonstrated that the Te solution volume with = 1.0 is optimal for the stable growth of high-quality CZT crystals by THM.

中文翻译:

Te溶液体积对移动加热器法生长CdZnTe晶体的影响

如今,移动加热器法 (THM) 被证明是生长高质量 CdZnTe (CZT) 晶体最有前途的方法之一。 THM本质上是一种熔体溶液生长方法,其中CZT溶质在Te溶液中从溶解界面扩散到生长界面并沉积在CZT晶种上。本工作研究了Te溶液体积对THM生长的CZT晶体溶质结构、生长界面、缺陷和电学性能的影响。 CZT晶体(φ30 × 80 mm)是通过THM与不同体积的Te溶液(= 1.5、1和0.5,其中 是Te溶液的高度,是Te溶液的直径)生长的。研究了CZT溶质在不同Te溶液中的分布和形貌,结果表明Te溶液中大尺寸的CZT溶质更有利于单晶生长,计算出生长温度为806~809℃。揭示了与生长的CZT晶体中Te夹杂物相关的生长界面,这表明用=1的Te溶液生长的CZT晶体具有平坦的生长界面和最低的Te浓度。在所有通过 THM 生长的 CZT 晶体中,Te 夹杂物的尺寸主要在 3-10 μm 范围内。不同CZT晶片的红外透过率在4000-500 cm范围内进行。在室温下测量了 Am 辐照下 CZT 探测器的电阻率和能谱。实验结果表明,Te溶液体积=1.0是THM稳定生长高质量CZT晶体的最佳选择。
更新日期:2024-02-29
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