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Advancements in Iso-Diameter seeded growth of CdZnTe crystals: A numerical modeling approach and applications in liquid phase Epitaxy
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-03-13 , DOI: 10.1016/j.jcrysgro.2024.127670
Chao Xu , Juan Zhang , Changhe Zhou , Shangshu Li , Ruiyun Sun

CdZnTe (CZT) is the preferred material for HgCdTe (MCT) infrared detectors and room temperature nuclear-radiation detector applications. However, their widespread application is hindered by the low yield, attributed to intrinsic thermophysical properties like extremely low thermal conductivity and stacking fault energy, complicating the growth of large-volume crystals. Based on steady-state computer numerical modeling simulation, this paper examines the impact of seed size variations (from 15 mm to 90 mm) in the crystal growth process on the initial growth surface morphology, simulations indicate that larger seed crystals are predisposed to developing more convex interfaces, which are conducive to enhanced crystal growth. An optimized Vertical Gradient Freeze (VGF) method employing -diameter seed (having the same diameter as the grown crystals) of approximately 90 mm has been developed to grow single crystals with reduced defect density in a VGF furnace, and the applications in liquid phase epitaxy (LPE) are also discussed.

中文翻译:

CdZnTe 晶体等直径籽晶生长的进展:数值模拟方法及其在液相外延中的应用

CdZnTe (CZT) 是 HgCdTe (MCT) 红外探测器和室温核辐射探测器应用的首选材料。然而,它们的广泛应用受到低产率的阻碍,这是由于其固有的热物理特性,如极低的导热率和堆垛层错能,使大体积晶体的生长变得复杂。基于稳态计算机数值模拟,本文研究了晶体生长过程中晶种尺寸变化(从15毫米到90毫米)对初始生长表面形貌的影响,模拟表明较大的晶种更容易发展出更多的晶种。凸界面,有利于促进晶体生长。开发了一种优化的垂直梯度冷冻(VGF)方法,采用约90毫米的直径晶种(与生长的晶体直径相同),可在VGF炉中生长具有降低缺陷密度的单晶,并在液相外延中应用(LPE)也被讨论。
更新日期:2024-03-13
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