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Understanding the degeneration of neurons from NbOx-based threshold device by an unhappy environment
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-14 , DOI: 10.1109/led.2024.3375851 Ao Chen 1 , Zhennan Lin 2 , Guokun Ma 3 , Rui Xiong 1 , Qiming Liu 1 , Hao Wang 3
中文翻译:
了解基于 NbOx 的阈值装置的神经元因不愉快的环境而退化
更新日期:2024-03-14
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-14 , DOI: 10.1109/led.2024.3375851 Ao Chen 1 , Zhennan Lin 2 , Guokun Ma 3 , Rui Xiong 1 , Qiming Liu 1 , Hao Wang 3
Affiliation
中文翻译:
了解基于 NbOx 的阈值装置的神经元因不愉快的环境而退化