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Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-14 , DOI: 10.1109/led.2024.3375952 A. Ranjan 1 , A. Padovani 2 , B. Dianat 2 , N. Raghavan 3 , K.L. Pey 3 , S.J. O’Shea 4
中文翻译：
估计栅极电介质单个击穿点的缺陷数量
更新日期：2024-03-14
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-14 , DOI: 10.1109/led.2024.3375952 A. Ranjan 1 , A. Padovani 2 , B. Dianat 2 , N. Raghavan 3 , K.L. Pey 3 , S.J. O’Shea 4
Affiliation
中文翻译：
估计栅极电介质单个击穿点的缺陷数量
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