The manipulation and detection of antiferromagnetic (AFM) in exchange bias (EB)-based MRAM using spin-orbit torque (SOT) holds promise for developing highly reliable and ultrafast spintronic memory devices. However, the high switching current induced by the SOT-induced EB field remains a major drawback. Additionally, the mechanism behind the interaction between the EB field and the SOT remains unclear. To address this issue, we have introduced a thin layer of Mo between the AFM and ferromagnetic-free layers to tune the EB field and study the SOT-induced switching properties. Our findings indicate that when the SOT is dominant during short pulses of a few nanoseconds, Mo insertion can significantly reduce the EB field and decrease the SOT switching current, leading to a reduction in power consumption of these memories. This approach could open up new possibilities for optimizing EB-MRAM and improving our understanding of AFM electronics.

使用自旋轨道扭矩 (SOT) 在基于交换偏置 (EB) 的 MRAM 中操纵和检测反铁磁 (AFM) 有望开发出高度可靠和超快的自旋电子存储器件。然而，SOT 引起的 EB 场引起的高开关电流仍然是一个主要缺点。此外，EB 场和 SOT 之间相互作用背后的机制仍不清楚。为了解决这个问题，我们在 AFM 和无铁磁层之间引入了一层薄薄的 Mo，以调节 EB 场并研究 SOT 引起的开关特性。我们的研究结果表明，当 SOT 在几纳秒的短脉冲期间占主导地位时，Mo 插入可以显着减少 EB 场并降低 SOT 开关电流，从而降低这些存储器的功耗。这种方法可以为优化 EB-MRAM 和提高我们对 AFM 电子学的理解开辟新的可能性。