We show in this paper that the technologically relevant field-like spin–orbit torque (SOT) shows resilience against the geometrical effect of electron backscattering. As a device grows smaller in size, the effect of geometry on physical properties like spin torque, and hence switching current could place a physical limit on the continued shrinkage of such a device — a necessary trend of all memory devices (MRAM). The geometrical effect of curves has been shown to impact quantum transport and topological transition of Dirac and topological systems. In our work, we have ruled out the potential threat of line curves degrading the effectiveness of SOT switching. In other words, SOT switching will be resilient against the influence of curves that line the circumferences of defects in the events of electron backscattering, which commonly happens in the channel of modern electronic devices.

我们在本文中表明，技术相关的类场自旋轨道扭矩（SOT）显示出抵抗电子背散射几何效应的弹性。随着设备尺寸越来越小，几何形状对自旋扭矩等物理特性的影响以及由此产生的开关电流可能会对此类设备的持续缩小产生物理限制——这是所有存储设备 (MRAM) 的必然趋势。曲线的几何效应已被证明会影响狄拉克和拓扑系统的量子输运和拓扑转变。在我们的工作中，我们已经排除了线曲线降低 SOT 开关有效性的潜在威胁。换句话说，SOT 开关将能够抵抗电子反向散射事件中缺陷周围曲线的影响，这种情况通常发生在现代电子设备的通道中。