Abstract

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

中文翻译：

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用于窄带辐射的 InGaAsP/InP 光伏转换器

摘要

利用已进行的研究，开发并创建了基于具有外延p-n结的 InGaAsP/InP 异质结构的窄带辐射（λ ≈ 1.0–1.3 μm）光电转换器。已经确定了适用于通过液相外延在各种成分中创建与磷化铟等周期的高质量四元InGaAsP固溶体层的技术方案。