2D materials have shown great promise for novel electronic functionality. A common challenge for 2D materials‐based transistors is forming a high‐performance gate terminal due to the challenges of depositing a dielectric of sufficient quality and controllable thickness. Herein the van‐der‐Waals integration of a free‐standing Al2O3 dielectric membrane is demonstrated as a facile, scalable, and powerful gate dielectric. A process is developed that permits the wet transfer of an amorphous alumina layer with a finely adjustable equivalent oxide thickness (EOT) in the single nanometer range. Electrical characterization demonstrates the high breakdown field and low leakage of the dielectric and integration into 2D materials transistors reveals a high performance. The wafer‐scale uniformity of the dielectric membrane permits the formation of large‐scale flexible devices that exhibit good robustness and long‐term stability.

中文翻译：

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可转移氧化铝膜作为柔性二维材料器件的高性能电介质

二维材料在新颖的电子功能方面显示出了巨大的前景。由于沉积足够质量和可控厚度的电介质的挑战，基于二维材料的晶体管面临的一个常见挑战是形成高性能栅极端子。在此，独立式 Al 的范德华积分2氧3介电膜被证明是一种简便、可扩展且功能强大的栅极电介质。开发了一种工艺，允许湿式转移非晶氧化铝层，其等效氧化物厚度（EOT）可在单纳米范围内精细调节。电气特性表明电介质具有高击穿场和低泄漏，并且集成到 2D 材料晶体管中显示出高性能。介电膜的晶圆级均匀性允许形成具有良好鲁棒性和长期稳定性的大规模柔性器件。