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Enhancement of localized superconductivity in BaFe2As2 films via Co-ion implantation
APL Materials ( IF 6.1 ) Pub Date : 2024-03-14 , DOI: 10.1063/5.0190904
Myeongjun Oh 1 , Jongmin Lee 2 , Woun Kang 3 , Sanghan Lee 2 , Younjung Jo 1
Affiliation  

In this study, we present a novel approach to localized superconductivity induction in BaFe2As2 films via targeted implantation of cobalt (Co) ions. Primarily, our study focuses on the systematic distribution of Co ions and the subsequent evolution of superconducting properties in Co-ion-implanted BaFe2As2 films. Our observations show that Co-ion distribution in the films is congruent with the results of analytical methodologies employed in the semiconductor industry, as confirmed via transmission electron microscopy imaging. The temperature-dependent resistivity curves reveal the concurrent presence of superconducting and non-superconducting regions. Moreover, the superconducting domain demonstrates the typical diamagnetic behavior intrinsic in superconductors. Importantly, Co-ion concentrations of ∼1020 cm−3 can be achieved by finely tuning the beam energy and ion dose. This concentration is instrumental in establishing an effective superconducting percolation pathway within the films.

中文翻译:

通过 Co 离子注入增强 BaFe2As2 薄膜的局域超导性

在这项研究中,我们提出了一种通过钴 (Co) 离子定向注入在 BaFe2As2 薄膜中实现局部超导感应的新方法。我们的研究主要集中在 Co 离子的系统分布以及 Co 离子注入 BaFe2As2 薄膜中超导特性的后续演变。我们的观察表明,薄膜中的钴离子分布与半导体行业中采用的分析方法的结果一致,这通过透射电子显微镜成像得到证实。与温度相关的电阻率曲线揭示了超导区域和非超导区域的同时存在。此外,超导域展示了超导体固有的典型抗磁行为。重要的是,通过微调束能量和离子剂量可以实现~1020 cm−3 的 Co 离子浓度。这种浓度有助于在薄膜内建立有效的超导渗透路径。
更新日期:2024-03-14
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