Excellent physical properties of wide and ultrawide bandgap semiconductor materials have significantly advanced the miniaturization of high-power devices, radio frequency devices, and light-emitting diodes. However, the heat generated per unit volume shows a rapid increase with the increase of power and the reduction of heat dissipation area, which puts forward new requirements for thermal management technology. Diamond, one of the members of ultrawide bandgap semiconductors, has a significant application value in the field of thermal management due to its extremely internal thermal conductivity, in addition to its potential as a more advanced electronic device. However, the thermal boundary resistance at the semiconductor interface accounts for a large portion of the total device thermal resistance when using diamond as a heat spreader, severely hindering the further development of thermal management technology. Over the past decades, researchers have made many attempts in the integration process, physical mechanism, and thermal characterization to deeply reveal the potential influence mechanism of thermal boundary conductivity (TBC), which has contributed significantly to the advancement of diamond heat spreader technology. However, these advances and reports are isolated, and due to experimental errors or theories, there are discrepancies between experiments and simulations in TBC at the same interface reported by different researchers. It is necessary to summarize the recent studies on TBC and distill the guiding general laws. This review attempts to link the three elements of material design and optimization, including structure, process, and intrinsic properties, to the thermal management design of interfaces from the perspective of material science and to form a guide for TBC regulation. First, a detailed summary and comparison of diamond heat spreader and semiconductor material integration processes is presented, and some emerging process technologies are introduced. Subsequently, the theoretical models and test technology advances on thermal boundary resistance are summarized. Based on these elements, implementable strategies for thermal property control of bonded interfaces are analyzed in detail. Finally, the challenges and directions for the future development of interfacial thermal property control are outlined. Providing systematic solutions has become an inevitable path for the semiconductor industry in the future, as traditional Moore's Law growth is difficult to sustain. This paper provides a comprehensive summary and outlook of the current stage of interfacial control for diamond heat spreaders.

中文翻译：

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半导体/金刚石异质集成的进展：技术方法、界面声子输运和热表征

宽禁带和超宽带隙半导体材料优异的物理性能极大地推进了高功率器件、射频器件、发光二极管等的小型化。但单位体积产生的热量随着功率的增加和散热面积的减少而呈现快速增加的趋势，这对热管理技术提出了新的要求。金刚石作为超宽带隙半导体的成员之一，除了具有作为更先进电子器件的潜力外，由于其极高的内部导热性，在热管理领域具有显着的应用价值。然而，当使用金刚石作为散热器时，半导体界面处的热边界热阻占器件总热阻的很大一部分，严重阻碍了热管理技术的进一步发展。过去几十年来，研究人员在集成过程、物理机制和热表征方面进行了许多尝试，深入揭示了热边界传导率（TBC）的潜在影响机制，为金刚石散热器技术的进步做出了重大贡献。然而，这些进展和报告都是孤立的，并且由于实验误差或理论，不同研究人员报告的同一界面的TBC实验和模拟之间存在差异。有必要总结近年来TBC的研究成果，提炼出指导性的一般规律。本文试图从材料科学的角度将材料设计和优化的三个要素（包括结构、工艺和内在属性）与界面的热管理设计联系起来，并形成TBC调控的指南。首先，对金刚石散热器和半导体材料集成工艺进行了详细的总结和比较，并介绍了一些新兴的工艺技术。随后总结了热边界热阻的理论模型和测试技术进展。基于这些要素，详细分析了粘合界面热性能控制的可实施策略。最后，概述了界面热性能控制未来发展的挑战和方向。传统摩尔定律增长难以持续，提供系统化解决方案已成为未来半导体行业的必然之路。本文对金刚石散热器界面控制的现阶段进行了全面的总结和展望。