Inhibitors are introduced into the slurry to avoid excessive metal corrosion during the chemical mechanical polishing (CMP) process. The anti-corrosion effect of surfactants in CMP was not investigated systematically in past studies. In this paper, three eco-friendly anionic surfactants, potassium laurate, potassium oleate, and dodecyl benzenesulfonic acid, were studied in depth as cobalt CMP inhibitors. Electrochemical experiments demonstrated that the three inhibitors act as anodic inhibitors. Static etching tests and surface morphology analysis proved that they can effectively inhibit the corrosion rate of cobalt and improve surface morphology. XPS results demonstrated that the inhibitor reduces corrosion by inhibiting cobalt oxidation. DFT calculations demonstrated that inhibitors adsorb on the cobalt surface through the O atoms in hydrophilic groups, while the CC double bond and benzene ring can significantly enhance the adsorption. Molecular dynamics simulations showed that the inhibitors are adsorbed on the cobalt surface in parallel. Additionally, all three surfactants improved the solution's wettability on cobalt. This report provides critical insights into the corrosion inhibition specific to cobalt CMP and offers an approach to realize the multi-functionality of a single agent in slurries.

中文翻译：

---

三种阴离子表面活性剂在钴 CMP 中的缓蚀作用：有效性和机理研究

在浆料中加入抑制剂，以避免化学机械抛光 (CMP) 过程中金属过度腐蚀。过去的研究并未系统地研究表面活性剂在CMP中的防腐蚀作用。本文对月桂酸钾、油酸钾和十二烷基苯磺酸三种环保型阴离子表面活性剂作为钴CMP抑制剂进行了深入研究。电化学实验表明这三种抑制剂均起到阳极抑制剂的作用。静态蚀刻测试和表面形貌分析证明，它们可以有效抑制钴的腐蚀速率，改善表面形貌。 XPS 结果表明，该抑制剂通过抑制钴氧化来减少腐蚀。 DFT计算表明，抑制剂通过亲水基团中的O原子吸附在钴表面，而CC双键和苯环可以显着增强吸附作用。分子动力学模拟表明抑制剂平行吸附在钴表面。此外，所有三种表面活性剂都改善了溶液对钴的润湿性。该报告提供了对钴 CMP 特定腐蚀抑制的重要见解，并提供了一种在浆料中实现单一试剂多功能性的方法。