The unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electrical properties of electrochemically exfoliated TMD nanoflakes remains unclear. In this study, the intrinsic electrical properties of diverse electrochemically exfoliated TMD nanoflakes are investigated and their applications in fully solution‐processed 2D electronics are explored. The study reveals that MoSe2 and WS2 nanoflakes are suitable candidates with moderate electron concentrations of 5.7 × 1012 and 2.5 × 1012 cm−2, respectively. These moderate electron concentrations enable a low off‐state current and high on‐state current, leading to a large on–off ratio (> 106) for the fabricated transistors. Furthermore, moderate annealing can increase the mobility by one order of magnitude by reducing the contact resistance and improving charge transport. Additionally, the trap density is significantly reduced, leading to an improved stability. Finally, fully solution‐processed 2D complementary inverters with a high voltage gain of 60 are demonstrated. This study contributes to a growing understanding of the properties of 2D materials in terms of transistor performances and promotes the development of solution‐processed devices applicable in next‐generation electronics.

中文翻译：

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用于互补金属氧化物半导体电子器件的电化学剥离二维过渡金属二硫属化物晶体管的电性能

二维材料（例如过渡金属二硫属化物（TMD））独特的半导体特性引起了电子器件领域的极大兴趣。然而，器件性能对电化学剥离 TMD 纳米片电性能的依赖性仍不清楚。在这项研究中，研究了各种电化学剥离的 TMD 纳米薄片的固有电特性，并探索了它们在完全溶液处理的二维电子学中的应用。研究表明MoSe2和WS2纳米薄片是合适的候选者，其电子浓度适中，为 5.7 × 1012和 2.5 × 1012厘米−2， 分别。这些适度的电子浓度可实现低断态电流和高通态电流，从而导致大的开关比（> 106）对于制造的晶体管。此外，适度退火可以通过降低接触电阻和改善电荷传输来将迁移率提高一个数量级。此外，陷阱密度显着降低，从而提高了稳定性。最后，演示了完全解决方案处理的具有 60 高电压增益的 2D 互补逆变器。这项研究有助于加深对二维材料在晶体管性能方面的理解，并促进适用于下一代电子产品的溶液处理器件的开发。