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Nanofluidic logic with mechano–ionic memristive switches
Nature Electronics ( IF 34.3 ) Pub Date : 2024-03-19 , DOI: 10.1038/s41928-024-01137-9
Theo Emmerich , Yunfei Teng , Nathan Ronceray , Edoardo Lopriore , Riccardo Chiesa , Andrey Chernev , Vasily Artemov , Massimiliano Di Ventra , Andras Kis , Aleksandra Radenovic

Neuromorphic systems are typically based on nanoscale electronic devices, but nature relies on ions for energy-efficient information processing. Nanofluidic memristive devices could thus potentially be used to construct electrolytic computers that mimic the brain down to its basic principles of operation. Here we report a nanofluidic device that is designed for circuit-scale in-memory processing. The device, which is fabricated using a scalable process, combines single-digit nanometric confinement and large entrance asymmetry and operates on the second timescale with a conductance ratio in the range of 9 to 60. In operando optical microscopy shows that the memory capabilities are due to the reversible formation of liquid blisters that modulate the conductance of the device. We use these mechano–ionic memristive switches to assemble logic circuits composed of two interactive devices and an ohmic resistor.



中文翻译:

具有机械离子忆阻开关的纳米流体逻辑

神经形态系统通常基于纳米级电子设备,但自然界依赖离子来进行节能信息处理。因此,纳米流体忆阻装置有可能用于构建电解计算机,模仿大脑的基本操作原理。在这里,我们报告了一种专为电路规模内存处理而设计的纳米流体设备。该器件采用可扩展工艺制造,结合了个位数纳米限制和大入口不对称性,并在第二时间尺度上运行,电导比在 9 至 60 范围内。在操作光学显微镜中表明,存储能力是由于调节装置电导的液体泡的可逆形成。我们使用这些机械离子忆阻开关来组装由两个交互设备和一个欧姆电阻器组成的逻辑电路。

更新日期:2024-03-19
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