Abstract

The work considers “transverse” and “longitudinal” photoconductivity modes, regarding the direction of radiation, photoconductivity in semiconductor detectors of CdZnTe. Mathematical calculations were made from the representation of the internal area of the detector in the form of radiation absorption sites. The results of the calculations are compared with experimentally measured photocurrent of the detector with a cross section of 2 × 2 mm CdZnTe from the direction of its radiation by X-ray. From the ratio of photocurrents in the range of X-ray radiation energies 35–72 keV for these two cases, a linear coefficient of X-ray absorption by the CdZnTe detector is determined.

中文翻译：

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横向和纵向光电导模式的 X 射线 CdZnTe 探测器

摘要

这项工作考虑了 CdZnTe 半导体探测器中辐射方向和光电导的“横向”和“纵向”光电导模式。根据以辐射吸收位点形式表示的探测器内部区域进行数学计算。将计算结果与从 X 射线辐射方向实验测量的横截面为 2 × 2 mm CdZnTe 的探测器的光电流进行了比较。根据这两种情况下 X 射线辐射能量 35–72 keV 范围内的光电流比率，确定了 CdZnTe 探测器的 X 射线吸收线性系数。