In this work, we investigate the effects of applying strain and transverse electric field on the geometrical parameters and the electronic properties of (5,5) Stanene-based nanotube (SnNT) using density functional theory (DFT) calculations. The results reveal that the geometrical parameters such as diameter and buckling parameter affect by applying strain. Moreover, it is found that the studied nanotube exhibits direct and indirect band gap under tensile and compressive strain, respectively. In addition, the band gap energy decreases by increasing the compressive strain until the semiconductor to metal phase transition occurs. The external transverse electric field leads to separate degenerated states in the band structure and reduces the band gap energy of nanotube. Tuning the electric field induces semiconductor to metal transition. To further examine the electronic properties of (5,5) SnNT, the effective mass of charge carriers is calculated under applied strains and transverse electric fields.

中文翻译：

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通过应变和横向电场调节锡基纳米管的结构和电子特性：第一性原理研究

在这项工作中，我们使用密度泛函理论（DFT）计算研究了施加应变和横向电场对（5,5）锡烯基纳米管（SnNT）的几何参数和电子性能的影响。结果表明，直径和屈曲参数等几何参数受施加应变的影响。此外，发现所研究的纳米管在拉伸和压缩应变下分别表现出直接和间接带隙。此外，带隙能量通过增加压缩应变而降低，直到发生半导体到金属的相变。外部横向电场导致能带结构中分离的简并态并降低了纳米管的带隙能量。调节电场会引起半导体向金属的转变。为了进一步检查 (5,5) SnNT 的电子特性，计算了施加应变和横向电场下载流子的有效质量。