With a view to device applications as a new material, n‐GaN grown on Si substrates is anodized at 4 V in an electrolyte solution for different energization times (15–240 min), and the dependence of the changes in electrical properties on the anodization time is evaluated. Anodization at 4 V increases the resistivity of n‐GaN with increasing energization time. To investigate the origin of the increase in resistivity by anodization, the results of the temperature dependence of the Hall mobility and electron density are discussed. The Hall mobility decreases with increasing energization time. The decrease in Hall mobility is because anodization forms neutral defects and increases neutral‐impurity scattering. The electron density decreases with increasing energization time. The decrease in electron density occurs because anodization deepens the original donor level and generates a deeper level that captures electrons. Thus, anodization changes the electrical properties of n‐GaN grown on Si substrate, and their dependence on energization time is discussed in detail.

中文翻译：

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Si 衬底上生长的阳极氧化 n-GaN 电性能的通电时间依赖性

着眼于作为新材料的器件应用，在 4 V 电解质溶液中对生长在 Si 衬底上的 n-GaN 进行不同通电时间（15-240 分钟）的阳极氧化，并研究电性能变化对阳极氧化的依赖性时间被评估。 4 V 下的阳极氧化随着通电时间的增加而增加了 n-GaN 的电阻率。为了研究阳极氧化导致电阻率增加的根源，讨论了霍尔迁移率和电子密度的温度依赖性结果。霍尔迁移率随着通电时间的增加而降低。霍尔迁移率的降低是因为阳极氧化形成中性缺陷并增加中性杂质散射。电子密度随着通电时间的增加而降低。电子密度降低的原因是阳极氧化加深了原始施主能级并产生了捕获电子的更深能级。因此，阳极氧化改变了在 Si 衬底上生长的 n-GaN 的电性能，并且详细讨论了它们对通电时间的依赖性。