Silicon carbide bipolar transistor (SiC BJT) is third-generation semiconductor devices, but due to the high driving loss ( E _dri ), SiC BJT has not been widely studied and commercialized. To solve this problem, a Si-SiC hybrid Darlington transistor pair (HDTP) is proposed, which is composed of an input Si BJT and an output SiC BJT connected by a common emitter. Moreover, the switch loss ( E _SW ) of the Si-SiC HDTP is low because the output BJT operates in the active region. The static and dynamic characteristics of Si-SiC HDTP are analyzed through TCAD simulations and experiments. The simulation results show that carriers of output SiC BJT can be quickly accumulated and swept out during switching transient. The experiment results show that the driving losses of the Si-SiC HDTP are reduced by 95% and 63% compared with SiC BJT and traditional SiC-SiC DTP, respectively. Under V _CE of 400 V and I _CE of 15 A, the E _SW of Si-SiC HDTP is decreased by 28.5% and 13.6% compared with SiC BJT and SiC mosfet , respectively. During switch stress test, the Si-SiC HDTP show higher switch reliability compared with the SiC mosfet .

中文翻译：

---

低功耗 Si-SiC 达林顿晶体管对

碳化硅双极晶体管（SiC BJT）是第三代半导体器件，但由于驱动损耗较高（ E _dri )，SiC BJT尚未得到广泛研究和商业化。为了解决这个问题，提出了一种Si-SiC混合达林顿晶体管对（HDTP），它由通过共发射极连接的输入Si BJT和输出SiC BJT组成。此外，开关损耗（ Si-SiC HDTP 的E _SW ) 较低，因为输出 BJT 工作在有源区。通过TCAD仿真和实验分析了Si-SiC HDTP的静态和动态特性。仿真结果表明，输出SiC BJT 的载流子可以在开关瞬态期间快速累积和清除。实验结果表明，与SiC BJT和传统SiC-SiC DTP相比，Si-SiC HDTP的驱动损耗分别降低了95%和63%。在下面V _CE为 400 V 且I _CE为 15 A，Si-SiC HDTP的E _SW比SiC BJT和SiC分别降低了28.5%和13.6%分别为MOSFET。在开关压力测试中，Si-SiC HDTP 与 SiC 相比表现出更高的开关可靠性场效应管。