Abstract

Ceramic nitride samples of tailored composition and shape have been prepared by controlled nitridation of Ti–V metal pairs. We have obtained kinetic and current–voltage curves for the interaction of the Ti–V metal pairs with nitrogen. In different parts of the metal pairs, the nitridation process follows different mechanisms. In the case of the pure metals, the formation of nearly stoichiometric ceramics involves the formation of three- and two-layer graded structures. Nitridation of the junction region, containing a Ti–V solid solution, is determined by the chemical affinity of titanium and vanadium for nitrogen. The formation of titanium nitride leads to decomposition of the Ti–V solid solution in the junction and vanadium metal separation on grain boundaries. The rate of vanadium nitridation increases as the titanium content of the solid solution decreases. The thermoelectric voltage of the Ti–V system in the temperature range from –195.7 to +550°C has been evaluated as a function of the degree of nitridation. The thermoelectric voltage and Seebeck coefficient of metal–ceramic and ceramic structures have been determined as functions of temperature. Characteristically, the thermoelectric voltage of all the nitrided pairs rises monotonically over the entire temperature range studied. Nitrided titanium–vanadium pairs with tailored composition can be used as ceramic thermoelectric converters.

中文翻译：

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Ti-V 金属对的氮化以及所得陶瓷热电势的评估

摘要

通过 Ti-V 金属对的控制氮化制备了具有定制成分和形状的氮化陶瓷样品。我们获得了 Ti-V 金属对与氮相互作用的动力学曲线和电流-电压曲线。在金属对的不同部分，氮化过程遵循不同的机制。在纯金属的情况下，近化学计量陶瓷的形成涉及三层和两层渐变结构的形成。包含 Ti-V 固溶体的结区的氮化是由钛和钒对氮的化学亲和力决定的。氮化钛的形成导致结中Ti-V固溶体的分解以及晶界上钒金属的分离。钒氮化速率随着固溶体中钛含量的降低而增加。Ti-V 系统在 –195.7 至 +550°C 温度范围内的热电电压已被评估为氮化程度的函数。金属陶瓷和陶瓷结构的热电电压和塞贝克系数已确定为温度的函数。从特征上看，所有氮化对的热电电压在整个研究温度范围内单调上升。具有定制成分的氮化钛-钒对可用作陶瓷热电转换器。