Molybdenum disulfide, a two-dimensional semiconductor, has found broad applications in various functional devices. Currently, developing a reliable method for growing wafer-scale monolayer molybdenum disulfide presents a significant challenge in its integration into the contemporary semiconductor industry. This study employed low-energy reactive magnetron sputtering with hydrogen disulfide gas to deposit wafer-scale epitaxial few-layer and monolayer molybdenum disulfide on -sapphire substrates. The epitaxial molybdenum disulfide nano-thin film was examined using scanning nano-probe X-ray diffraction technique, revealing a single grain size of no less than 50 × 50 μm. Furthermore, the growth of monolayer molybdenum disulfide on both -sapphire and thermal silicon oxide substrates was verified through Raman microscope. Measurements of photoluminescence and X-ray photoelectron spectroscopy also confirmed the monolayer state of the sputtered nano-thin films. This study suggests that reactive magnetron sputtering with hydrogen disulfide gas offers a cost-effective, scalable method for growing large-area molybdenum disulfide nano-thin films, thereby holding significant potential for practical semiconductor industrial applications.

中文翻译：

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低能反应磁控溅射在蓝宝石上外延晶圆级二硫化钼超薄膜

二硫化钼是一种二维半导体，在各种功能器件中有着广泛的应用。目前，开发一种可靠的方法来生长晶圆级单层二硫化钼，对其融入当代半导体行业提出了重大挑战。本研究采用低能反应磁控溅射和二硫化氢气体在蓝宝石衬底上沉积晶圆级外延几层和单层二硫化钼。采用扫描纳米探针X射线衍射技术对外延二硫化钼纳米薄膜进行了检测，结果显示单个晶粒尺寸不小于50×50μm。此外，通过拉曼显微镜验证了单层二硫化钼在蓝宝石和热氧化硅衬底上的生长。光致发光和X射线光电子能谱的测量也证实了溅射纳米薄膜的单层状态。这项研究表明，用二硫化氢气体进行反应磁控溅射为生长大面积二硫化钼纳米薄膜提供了一种经济高效、可扩展的方法，从而在实际半导体工业应用中具有巨大的潜力。