Epitaxial growth of Ge on Si has been widely studied for photonic and electronic applications. However, GeSi interdiffusion during the growth or annealing deteriorates the performance of the devices. This paper explores the evolution of the interface and GeSi interdiffusion upon post-annealing. We found the GeSi interdiffusion islands with concentration plateaus gradually disappeared upon annealing and the interdiffusion became more pronounced in the Ge layer. Moreover, by using a thin layer of SiO as a reference, we directly visualized the Kirkendall phenomenon, , the migration of the Ge/Si interface towards the Si substrate after the annealing. Effective interdiffusivity at 900 °C was extracted using Boltzmann-Matano analysis, which indicated that the GeSi interdiffusion at the interface was dominated by dislocation-mediated interdiffusion.

中文翻译：

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退火过程中外延Ge-on-Si中GeSi岛的演化

Ge 在 Si 上的外延生长已被广泛研究用于光子和电子应用。然而，生长或退火过程中GeSi的相互扩散会降低器件的性能。本文探讨了后退火过程中界面和 GeSi 相互扩散的演变。我们发现具有浓度平台的GeSi相互扩散岛在退火后逐渐消失，并且Ge层中的相互扩散变得更加明显。此外，通过使用一薄层 SiO2 作为参考，我们直接可视化了柯肯达尔现象，即退火后 Ge/Si 界面向 Si 衬底的迁移。使用玻尔兹曼-马塔诺分析提取了 900 °C 下的有效互扩散率，这表明界面处的 GeSi 互扩散以位错介导的互扩散为主。