Two dimensional materials, such as sp-bonded boron nitride (BN) and graphene, have been proven to be excellent templates for the growth and fabrication of independent group III-nitride materials. Herein, wafer level sp-bonded BN film was successfully grown as a release layer on two-inch sapphire substrate using MOCVD. The different nucleation mechanisms of gallium nitride (GaN) and aluminum nitride (AlN) grown on the BN surface were investigated. We discovered that AlN has a higher nucleation island density compared to GaN on the surface of BN which facilitates better merging of the GaN epitaxial layer. In addition, the quality of the GaN epitaxial layer was optimized by adjusting the growth temperature of AlN. A complete AlGaN/GaN heterojunction structure was subsequently grown on the best quality of GaN, and its average mobility and interlayer carrier concentration was about 1600 cm V s and 1 × 10 cm. Finally, the AlGaN/GaN heterojunction was easily transferred from the substrate using tape, which proved the good 2D characteristics of sp-bonded BN and can undergo non-destructive van der Waals transfer for the upper layer device.

中文翻译：

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AlN成核层控制的sp2键合BN上AlGaN/GaN异质结的晶圆级准范德华外延

二维材料，例如 sp 键合氮化硼 (BN) 和石墨烯，已被证明是独立 III 族氮化物材料生长和制造的优异模板。在此，使用 MOCVD 在两英寸蓝宝石衬底上成功生长了晶圆级 sp 键合 BN 薄膜作为释放层。研究了在 BN 表面生长的氮化镓 (GaN) 和氮化铝 (AlN) 的不同成核机制。我们发现，与 GaN 相比，AlN 在 BN 表面具有更高的成核岛密度，这有利于 GaN 外延层更好的合并。此外，通过调整AlN的生长温度来优化GaN外延层的质量。随后在质量最好的GaN上生长出完整的AlGaN/GaN异质结结构，其平均迁移率和层间载流子浓度约为1600 cm V·s和1 × 10 cm。最后，使用胶带轻松地将AlGaN/GaN异质结从衬底上转移，这证明了sp键合BN具有良好的2D特性，并且可以对上层器件进行非破坏性范德华转移。