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Stress and interfacial/surface synergistically modulated charge transfer mechanism and nonlinear absorption properties in Ti3C2(-O)/MoS2 heterostructure
Applied Surface Science ( IF 6.7 ) Pub Date : 2024-03-15 , DOI: 10.1016/j.apsusc.2024.159908
Yu-Xin Liu , Shan-Shan Kan , Ming-Kun Jiang , Shi-Xuan Deng , Zhe-Kun Ren , Xiao-Meng Jiang , Cheng-Bao Yao

Here, TiC(-O)/MoS with two interface contacts were obtained by two-steps of hydrothermal (HT)/HT and HT/magnetron sputtering (MS) technique. The visualizing orientation-controlled interlayer interconnection and vertical/lateral contact modes for interface properties and light-matter coupling effect have been analyzed. The Raman spectra of TiC(-O)/MoS(HT) verified that the redshift of characteristic peak for TiC(-O) was dominated by interfacial stress. The results of TiC(-O)/MoS(MS) revealed that the overall blue shift of the characteristic peak for TiC(-O) and the redshift of the characteristic peak for MoS can be attributed to the interface charge transfer of MoS to TiC(-O). The exciton quenching of TiC(-O) and the enhancement of the C exciton transition luminescence for MoS were observed in the photoluminescence result. It is proved that the high-excited electrons of TiC(-O) transfers to the vibration level of the conduction band of MoS under photoexcitation. The nonlinear absorption and transient absorption properties of TiC(-O)/MoS heterojunction were studied by Z-scan and pump–probe technology. An additional interfacial charge transfer signal in the hybrid spectra represents the efficient interfacial charge transfer of TiC(-O)/MoS(HT) and TiC(-O)/MoS(MS). This work also provides a basic theory for the emerging heterojunctions, which is conducive to developing the potential optoelectronic devices in energy environment field.

中文翻译:

Ti3C2(-O)/MoS2异质结构中的应力和界面/表面协同调制电荷转移机制和非线性吸收特性

在这里,通过水热(HT)/HT和HT/磁控溅射(MS)技术的两步获得了具有两个界面接触的TiC(-O)/MoS。分析了界面特性和光物质耦合效应的可视化方向控制的层间互连和垂直/横向接触模式。 TiC(-O)/MoS(HT)的拉曼光谱证实TiC(-O)特征峰的红移主要受界面应力的影响。 TiC(-O)/MoS(MS)的结果表明,TiC(-O)特征峰整体蓝移和MoS特征峰红移可归因于MoS到TiC的界面电荷转移(-O)。光致发光结果中观察到TiC(-O)的激子猝灭和MoS的C激子跃迁发光的增强。证明在光激发下TiC(-O)的高激发电子转移到MoS导带的振动能级。采用Z扫描和泵浦探针技术研究了TiC(-O)/MoS异质结的非线性吸收和瞬态吸收特性。混合光谱中的附加界面电荷转移信号代表 TiC(-O)/MoS(HT) 和 TiC(-O)/MoS(MS) 的有效界面电荷转移。该工作也为新兴的异质结提供了基础理论,有利于开发能源环境领域潜在的光电器件。
更新日期:2024-03-15
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