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Improving photostability of non-fullerene acceptor-based inverted organic solar cells using Ga-doped ZnO electron transport layer
Applied Surface Science ( IF 6.7 ) Pub Date : 2024-03-17 , DOI: 10.1016/j.apsusc.2024.159930
Hyeong Won Lee , Swarup Biswas , Hyojeong Choi , Yongju Lee , Hyeok Kim

Organic solar cells (OSCs) are gaining attention for powering Internet of Things devices due to their impressive power conversion efficiency, flexibility, and slim designs suitable for both indoor and outdoor. The focus on inverted-structured OSCs is increasing due to their superior stability compared to conventional OSCs. This study investigates the use of inverted OSCs with electron transport layers (ETL) made from ZnO and Ga-doped ZnO for light harvesting. OSCs were fabricated using PM6:ITIC-4F as the active layer, and the impact of ZnO doping (Ga) concentration was examined under 1-sun and 1000 lx halogen. Optimizing the doping concentration significantly improved device performance, with PCE values of 10.96 % and 4.95 % for optimally doped ZnO under 1-sun conditions and halogen lamps, respectively. A comparison of photostability under 1-sun and 1000 lx halogen, with varying light soaking durations (0–240 min), showed that Ga-doping in the ZnO ETL improved photostability by reducing oxygen vacancies and slowing down their formation during continuous light exposure. This decrease in oxygen vacancies and enhancement of grain boundaries positively affected charge transport, leading to higher PCE. In summary, Ga-doped ZnO ETL in inverted OSCs demonstrates improved performance and photostability, making them promising for various light harvesting applications.

中文翻译:

使用 Ga 掺杂 ZnO 电子传输层提高非富勒烯受体型倒置有机太阳能电池的光稳定性

有机太阳能电池 (OSC) 因其令人印象深刻的电力转换效率、灵活性和适合室内和室外的纤薄设计而在为物联网设备供电方面受到关注。由于倒置结构 OSC 与传统 OSC 相比具有卓越的稳定性,因此越来越受到人们的关注。本研究研究了使用具有由 ZnO 和 Ga 掺杂 ZnO 制成的电子传输层 (ETL) 的倒置 OSC 来收集光。使用 PM6:ITIC-4F 作为有源层制造 OSC,并在 1-sun 和 1000 lx 卤素灯下检查 ZnO 掺杂 (Ga) 浓度的影响。优化掺杂浓度显着提高了器件性能,最佳掺杂 ZnO 在 1-sun 条件和卤素灯条件下的 PCE 值分别为 10.96% 和 4.95%。在 1-sun 和 1000 lx 卤素灯下以及不同的光浸泡时间(0-240 分钟)下的光稳定性比较表明,ZnO ETL 中的 Ga 掺杂通过减少氧空位并减缓连续光照过程中氧空位的形成来提高光稳定性。氧空位的减少和晶界的增强对电荷传输产生积极影响,从而导致更高的 PCE。总之,倒置 OSC 中的 Ga 掺杂 ZnO ETL 表现出改进的性能和光稳定性,使其在各种光捕获应用中具有广阔的前景。
更新日期:2024-03-17
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