The effects of NF or F gas annealing on epitaxially grown GaN and its interface with sputter-deposited Pt were investigated using hard X-ray photoelectron spectroscopy. Annealing GaN and Pt/GaN samples in an NF atmosphere led to the emergence of prominent F 1 peaks and chemically shifted Ga 2 peaks, indicating the efficient formation of Ga–F species not only in the bare GaN surface but also in the Pt/GaN interface, even when the NF treatment was performed after the Pt was deposited. By contrast, F annealing also led to the fluorination of the GaN surface and nonfluorination of the Pt/GaN interface. Although the plasma sputtering process removed F from the surface, band shifts were observed when the treatment conditions were varied. The findings in this study suggest that NF treatment is an effective post-processing method for fluorinating GaN-based systems before or after metal deposition.

中文翻译：

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硬X射线光电子能谱分析GaN表面和Pt/GaN界面的NF3和F2气体氟化

使用硬 X 射线光电子能谱研究了 NF 或 F 气体退火对外延生长的 GaN 及其与溅射沉积 Pt 的界面的影响。在 NF 气氛中对 GaN 和 Pt/GaN 样品进行退火导致出现显着的 F 1 峰和化学位移的 Ga 2 峰，表明 Ga-F 物质不仅在裸露的 GaN 表面而且在 Pt/GaN 中有效形成即使在 Pt 沉积后进行 NF 处理时，界面也会出现这种情况。相比之下，F 退火还导致 GaN 表面氟化和 Pt/GaN 界面非氟化。尽管等离子溅射工艺从表面去除了F，但当处理条件改变时观察到能带移动。本研究的结果表明，NF 处理是金属沉积之前或之后氟化 GaN 基系统的有效后处理方法。