In the realm of photodetection, there has been growing interest in Ferroelectric/semiconductors heterostructures due to the interfacial charge coupling resulting from ferroelectric polarization. In this study, we created a thin film consisting of alternating layers of BaCaTiSnO and PbZrTiO (referred to as BCST/PZT) using a sol-gel growth method on a (0001) GaN/c-sapphire template. Our objective was to examine the impact of these films on the optoelectronic properties of ferroelectric/GaN heterojunctions. Our findings indicate that the BCST/PZT multilayer films possess improved ferroelectric properties. Furthermore, the multilayer structure demonstrates outstanding optoelectronic performance compared to the individual BCST/GaN or PZT/GaN structures, particularly within the 1 V to 3 V bias range. Notably, the multilayer thin film/GaN devices exhibit a responsivity of 121.4 mA/W and a detectivity of 1.44 × 10 Jones under a 1 V bias voltage. In contrast to other GaN-based materials documented in the literature, our straightforward sol-gel techniques yielded devices exhibiting UV photodetection characteristics that are either comparable to or superior than those reported.

中文翻译：

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用于紫外光电探测器应用的 GaN 衬底上的多层 BCST/PZT 薄膜

在光电检测领域，由于铁电极化导致的界面电荷耦合，人们对铁电/半导体异质结构越来越感兴趣。在这项研究中，我们在 (0001) GaN/c 蓝宝石模板上使用溶胶-凝胶生长方法创建了由 BaCaTiSnO 和 PbZrTiO 交替层组成的薄膜（称为 BCST/PZT）。我们的目标是研究这些薄膜对铁电/GaN 异质结光电特性的影响。我们的研究结果表明 BCST/PZT 多层薄膜具有改善的铁电性能。此外，与单独的 BCST/GaN 或 PZT/GaN 结构相比，多层结构表现出出色的光电性能，特别是在 1 V 至 3 V 偏置范围内。值得注意的是，多层薄膜/GaN器件在1 V偏置电压下表现出121.4 mA/W的响应度和1.44×10琼斯的探测度。与文献中记录的其他基于 GaN 的材料相比，我们直接的溶胶-凝胶技术生产的器件表现出与报道的那些相当或优于的紫外光电检测特性。