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Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2024-03-18 , DOI: 10.1016/j.jcrysgro.2024.127673
T. Ito , Y. Tomioka , F. Rackerseder , M. Traub , D. Hoffmann

To investigate the effect of high-power laser heating on the floating zone (FZ) method, a crystal of β-GaO was grown by the LDFZ method using a newly developed optical system equipped with a 20-kW laser diode (LD) system as a heat source. The growth started from a twin-free seed crystal with a diameter of 7 mm and the diameter of the crystal was increased gradually up to 30 mm. With increasing the diameter of the crystal, three patterns of the beam intensity profile were switched to heat the whole of the molten zone locally and intensively. The intensity profile of the five beamlets irradiating the sample was adjusted with a combination of the zooming by the optical system and the partial blocking by the alumina cylinder. By the proper tuning of the beam profile and the proper selection of the diameter of the feed rod, the molten zone was kept stable against gravity. The obtained crystal has a layer texture without clear facets or cracks. It almost conserves the crystallographic direction of the seed crystal but is twinned except for a twin-free region near the seed crystal.

中文翻译:

激光二极管加热浮区法 (LDFZ) 生长直径 30 mm β-Ga2O3 晶体

为了研究高功率激光加热对浮区 (FZ) 方法的影响,使用配备 20 kW 激光二极管 (LD) 系统的新开发的光学系统,通过 LDFZ 方法生长了 β-GaO 晶体。一个热源。生长从直径为7毫米的无孪晶籽晶开始,晶体的直径逐渐增加至30毫米。随着晶体直径的增加,三种光束强度分布模式被切换,以局部集中地加热整个熔融区。通过光学系统的变焦和氧化铝圆柱体的部分阻挡的组合来调整照射样品的五个子束的强度分布。通过适当调整光束轮廓和适当选择进给棒的直径,熔融区能够抵抗重力而保持稳定。所得晶体具有层状结构,无明显刻面或裂纹。它几乎保留了籽晶的晶体方向,但除了籽晶附近的无孪晶区域外,它是孪生的。
更新日期:2024-03-18
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