Abstract

Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr₃ and Bi-doped CsPbI₃ PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr₃ and CsPbI₃ to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr₃) to 630 nm (Bi-doped CsPbI₃) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi.

Graphical abstract

Impact statement

We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX₃ perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr₃) to 630 nm (Bi-doped CsPbI₃) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.

中文翻译：

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用于光电器件的光致发光双掺杂 CsPbX3 (X: Br, I) 钙钛矿量子点

摘要

钙钛矿量子点（PQD）因其令人惊叹的特性而成为近年来的热点，例如高光致发光量子产率、可调谐发射和窄带宽对其在不同光电器件中的应用非常重要。本工作通过热注射法合成了Bi掺杂CsPbBr ₃和Bi掺杂CsPbI _{3 PQD，并与原始CsPbBr 3}和CsPbI ₃进行比较，分析Bi和卤素对其性能的影响。此外，所有样品都是在130°C、150°C和170°C下合成的，目的是分析温度的影响。结果显示，由于“X”位置卤素的影响和轻微蓝移，发射波长范围很广，从约 500 nm（Bi 掺杂 CsPbBr ₃）到 630 nm（Bi 掺杂 CsPbI ₃ ）。原始量子点掺杂 Bi 后的主要光致发光发射带。

图形概要

影响报告

我们相信，本文中的工作代表了钙钛矿量子点在光电子应用（例如 LED 或激光器）中应用的重要进展。我们在这里报告了 Bi 掺杂 CsPbX ₃钙钛矿量子点 (PQD)的合成和表征，即 X: Br 和 I。这些 Bi 掺杂 PQD 显示出从 500 nm 左右的宽范围发射波长（Bi 掺杂 CsPbBr ₃）到 630 nm（Bi 掺杂的 CsPbI ₃），这是由于“X”位置的卤素的影响以及用 Bi 掺杂原始量子点后主光致发光发射带中的轻微蓝移的结果。因此，由于其高光致发光发射和可调谐发射，它们是制造 LED 和激光器等光电器件的良好候选者。