This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (I_on/I_off ~ 10⁹) and minimum subthreshold swing (19 mV/decade) for the proposed Si_0.7Ge_0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si_0.7Ge_0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including I_DS, C_GS, C_GD, g_m, g_ds, f_T, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including g_m2, g_m3, VIP₂, VIP₃, 1-dB compression point, IIP₃, and IMD₃ are also investigated for the proposed structure, which again demonstrates better performance.

这项工作研究了具有 Si/SiGe 异质结的双材料栅极 p 沟道隧道场效应晶体管 (p-DMG-TFET)，以在射频 (RF) 应用中实现更好的性能。仿真结果表明，与用作 Si 的 Si _0.7 Ge _0.3异质 TFET 相比，所提出的 Si 0.7 Ge 0.3 异质 TFET 具有改进的导通电流/截止电流比（ I _on / I _off  ~ 10 ⁹ ）和最小亚阈值摆幅（19 mV/decade）。渠道材料。对 Si _0.7 Ge _0.3和 Si 通道器件进行了全面的仿真研究，并根据它们的直流、模拟/射频和线性性能，直接比较揭示了数字和模拟应用的改进结果。研究了所提出的 DMG-HJ-TFET 的许多特性，包括I _DS、C _GS、C _GD、g _m、g _ds、f _T、TGF、TFP、GFP 和 GTFP，并与 Si 通道器件进行了比较。该器件在射频电路应用中表现出更好的性能。还针对所提出的结构研究了包括g _m2、g _m3、VIP ₂、VIP ₃、1-dB 压缩点、IIP ₃和 IMD ₃在内的射频品质因数 (FOM) ，这再次证明了更好的性能。