The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ( mosfet ) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gate driver (D-GD) design. For use in high-voltage converter designs, configuring the half-bridge module as series connection with effective voltage balancing (VB) can make it aggregated into a single device with double voltage rating. Hence, in this letter, a novel active VB scheme with seamless integration into D-GD is proposed. Different from existing passive VB methods with significant loss and active VB strategies with high cost and complexity, the proposed active VB circuitry only consists of few low-voltage and low-power bipolar junction transistors (BJTs), resistors, and capacitors, which offers the prominent advantages of ease of implementation and integration, low cost, and high reliability. Analysis is provided to illustrate the working principle, followed by the criterion for parameter selection. Finally, the experimental results based on a 3.3-kV half-bridge SiC mosfet power module are given to demonstrate operational performances.

中文翻译：

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有源电压平衡，无缝集成到双栅极驱动器中，用于 SiC Mosfets 串联

碳化硅（SiC）金属氧化物半导体场效应晶体管半桥配置的多功能性（ MOSFET ）电源模块有助于其广泛采用，凸显了其相应的双栅极驱动器（D-GD）设计的受欢迎程度和重要性。对于高压转换器设计中的使用，将半桥模块配置为具有有效电压平衡 (VB) 的串联，可以使其聚合到具有双倍额定电压的单个器件中。因此，在这封信中，提出了一种无缝集成到 D-GD 中的新型主动 VB 方案。与现有具有显着损耗的无源 VB 方法和具有高成本和复杂性的有源 VB 策略不同，所提出的有源 VB 电路仅由少量低压和低功耗双极结型晶体管（BJT）、电阻器和电容器组成，这提供了具有易于实现和集成、成本低、可靠性高等突出优点。分析说明了其工作原理，并给出了参数选择的准则。最后是基于3.3kV半桥SiC的实验结果给出MOSFET功率模块来演示操作性能。