Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates. Time‐integrated photoluminescence (PL) spectroscopy under selective excitation conditions demonstrates that the decrease in the radiative recombination efficiency with increasing temperature is one of the causes of the thermal droop in AlGaN‐based deep‐ultraviolet (DUV) light‐emitting diodes. Time‐resolved PL spectroscopy indicates that not only the decreasing nonradiative recombination lifetime but increasing radiative recombination lifetime with increasing temperature contributes to the thermal droop. The temperature dependence of the radiative recombination lifetime is discussed, revealing that luminescence linewidth is a valuable criterion for designing efficient AlGaN‐based DUV emitters.

中文翻译：

---

10 至 500 K 外延横向生长的 AlN/蓝宝石上 AlGaN 量子阱中的辐射和非辐射复合过程

在 10 至 500 K 的温度范围内，研究了外延横向过度生长的 AlN/蓝宝石模板上的 AlGaN 量子阱的辐射和非辐射复合过程。选择性激发条件下的时间积分光致发光（PL）光谱表明，随着温度升高，辐射复合效率降低是AlGaN基深紫外（DUV）发光二极管热下降的原因之一。时间分辨PL光谱表明，随着温度的升高，不仅非辐射复合寿命缩短，而且辐射复合寿命增加也会导致热衰减。讨论了辐射复合寿命的温度依赖性，揭示了发光线宽是设计高效的基于 AlGaN 的 DUV 发射器的一个有价值的标准。