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High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-22 , DOI: 10.1109/led.2024.3381129 Yifu Wang 1 , Zhiyuan Wang 1 , Weizong Xu 1 , Feng Zhou 1 , Dong Zhou 1 , Fangfang Ren 1 , Dunjun Chen Rong Zhang 1 , Youdou Zheng 1 , Hai Lu 1
中文翻译：
采用选择性区域离子注入制造的具有横向 pn 结的高性能 4H-SiC EUV 光电二极管
更新日期：2024-03-22
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-22 , DOI: 10.1109/led.2024.3381129 Yifu Wang 1 , Zhiyuan Wang 1 , Weizong Xu 1 , Feng Zhou 1 , Dong Zhou 1 , Fangfang Ren 1 , Dunjun Chen Rong Zhang 1 , Youdou Zheng 1 , Hai Lu 1
Affiliation
中文翻译：
采用选择性区域离子注入制造的具有横向 pn 结的高性能 4H-SiC EUV 光电二极管
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