0.5, 1, 2, and 5% Er-doped LaGaSiO (LGS) single crystals were synthesized by the Floating Zone method and the photoluminescence (PL) and scintillation properties were characterized. Emission peaks appeared at visible–near-infrared (NIR) regions. Their spectral features matched with those due to the 4f–4f transitions of Er. The PL quantum yields of 0.5, 1, 2, and 5% Er-doped samples were respectively 45.0, 73.3, 82.5, and 69.4%. The decay times due to the H–I transitions of Er were obtained when visible ranges were monitored under excitation of both visible lights and X-rays. All the prepared samples showed good linearity between the X-ray exposure dose rate and scintillation signals in NIR ranges. The best lower detection limit in prepared samples was 5 mGy/h recorded by the 2% Er-doped LGS.

中文翻译：

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发射近红外光子的 Er 掺杂 La3Ga5SiO14 单晶的光学和闪烁特性

采用浮区法合成了 0.5%、1%、2% 和 5% Er 掺杂的 LaGaSiO (LGS) 单晶，并对其光致发光 (PL) 和闪烁性能进行了表征。发射峰出现在可见光-近红外（NIR）区域。它们的光谱特征与 Er 的 4f-4f 跃迁所产生的光谱特征相匹配。 Er掺杂量为0.5%、1%、2%和5%的样品的PL量子产率分别为45.0%、73.3%、82.5%和69.4%。当在可见光和 X 射线的激发下监测可见光范围时，获得了 Er 的 H-I 跃迁引起的衰减时间。所有制备的样品在近红外范围内的 X 射线暴露剂量率和闪烁信号之间均表现出良好的线性。 2% Er 掺杂 LGS 记录的制备样品的最佳检测下限为 5 mGy/h。