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Improved Specific Contact Resistivity in Amorphous IGZO Transistors using an ALD-Derived Al-Doped ZnO Interlayer
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381159 Joo Hee Jeong 1 , Seong Hun Yoon 1 , Seung Hee Lee 2 , Bong Jin Kuh 2 , Taikyu Kim 3 , Jae Kyeong Jeong 1
中文翻译:
使用 ALD 衍生的掺铝 ZnO 中间层提高非晶 IGZO 晶体管的比接触电阻率
更新日期:2024-03-25
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381159 Joo Hee Jeong 1 , Seong Hun Yoon 1 , Seung Hee Lee 2 , Bong Jin Kuh 2 , Taikyu Kim 3 , Jae Kyeong Jeong 1
Affiliation
中文翻译:
使用 ALD 衍生的掺铝 ZnO 中间层提高非晶 IGZO 晶体管的比接触电阻率