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Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381110 Kitae Lee 1 , Jiyong Yim 2 , Wonjun Shin , Sihyun Kim 3 , Daewoong Kwon 2
中文翻译:
铁电场效应晶体管存储特性的缩放效应
更新日期:2024-03-25
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381110 Kitae Lee 1 , Jiyong Yim 2 , Wonjun Shin , Sihyun Kim 3 , Daewoong Kwon 2
Affiliation
中文翻译:
铁电场效应晶体管存储特性的缩放效应