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GaN-based HEMT-type VUV Phototransistors with Superior Triple-mode Photodetection
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381838 Fangzhou Liang 1 , Haochen Zhang 1 , Siqi Zhu 2 , Lei Yang 1 , Zhe Huang 1 , Kun Liang 1 , Zhanyong Xing 1 , Hu Wang 1 , Mingshuo Zhang 1 , Jiayao Li 1 , Yankai Ye 1 , Haiding Sun 1
中文翻译:
具有卓越三模光电检测功能的 GaN 基 HEMT 型 VUV 光电晶体管
更新日期:2024-03-25
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-25 , DOI: 10.1109/led.2024.3381838 Fangzhou Liang 1 , Haochen Zhang 1 , Siqi Zhu 2 , Lei Yang 1 , Zhe Huang 1 , Kun Liang 1 , Zhanyong Xing 1 , Hu Wang 1 , Mingshuo Zhang 1 , Jiayao Li 1 , Yankai Ye 1 , Haiding Sun 1
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中文翻译:
具有卓越三模光电检测功能的 GaN 基 HEMT 型 VUV 光电晶体管