This study systematically explored the binding energy and the photoionization cross-section (PCS) of a hydrogenic shallow donor impurity within a GaAs double quantum box structure incorporated into a As matrix under the influence of an external intense magnetic field. The computations are performed using the effective-mass approximation (EMA) and the finite element method (FEM), taking into account a finite potential across all surfaces of the nanosystem. The results emphasize the significant role of the magnetic field, primarily in enhancing the donor binding energy within the double quantum box system. We demonstrate that increasing the magnetic field results in an augmentation of binding energy across various aluminum concentrations. The PCS of a shallow donor impurity undergoes a blue shift when shifted from the barrier center to the box center, attributed to the increased binding energy. When the double quantum box is subjected to a magnetic field effect, the amplitude peaks of PCS show an elevation coupled with a blue shift. By setting magnetic field values at 0 T, 35 T, or 70 T and varying aluminum concentrations, we observe a shift in the PCS towards higher energy levels along with an increase in peak amplitude. We also study the PCS of the donor impurity as a function of photon energy, mainly examining the effects of box width and barrier width modifications in the double quantum box.

中文翻译：

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检查磁场对双量子盒中供体掺杂剂光电离截面的影响

本研究系统地探讨了在外部强磁场的影响下，掺入 As 基体的 GaAs 双量子盒结构中氢浅施主杂质的结合能和光电离截面 (PCS)。使用有效质量近似（EMA）和有限元法（FEM）进行计算，并考虑到纳米系统所有表面的有限电势。结果强调了磁场的重要作用，主要是增强双量子盒系统内的供体结合能。我们证明，增加磁场会导致不同铝浓度下的结合能增加。当浅施主杂质的 PCS 从势垒中心转移到盒中心时，由于结合能的增加而发生蓝移。当双量子盒受到磁场效应时，PCS的振幅峰值呈现出高程并伴有蓝移。通过将磁场值设置为 0 T、35 T 或 70 T 并改变铝浓度，我们观察到 PCS 向更高能级的转变以及峰值振幅的增加。我们还研究了施主杂质的 PCS 作为光子能量的函数，主要检查双量子盒中盒宽度和势垒宽度修改的影响。