Due to promising functionalities that may dramatically enhance spintronics performance, antiferromagnets are the subject of intensive research for developing the next-generation active elements to replace ferromagnets. In particular, the recent experimental demonstration of tunneling magnetoresistance and electrical switching using chiral antiferromagnets has sparked expectations for the practical integration of antiferromagnetic materials into device architectures. To further develop the technology to manipulate the magnetic anisotropies in all-antiferromagnetic devices, it is essential to realize exchange bias through the interface between antiferromagnetic multilayers. Here, the first observation on the omnidirectional exchange bias at an all-antiferromagnetic polycrystalline heterointerface is reported. This experiment demonstrates that the interfacial energy causing the exchange bias between the chiral-antiferromagnet Mn₃Sn/collinear-antiferromagnet MnN layers is comparable to those found at the conventional ferromagnet/antiferromagnet interface at room temperature. In sharp contrast with previous reports using ferromagnets, the magnetic field control of the unidirectional anisotropy is found to be omnidirectional due to the absence of the shape anisotropy in the antiferromagnetic multilayer. The realization of the omnidirectional exchange bias at the interface between polycrystalline antiferromagnets on amorphous templates, highly compatible with existing Si-based devices, paves the way for developing ultra-low power and ultra-high speed memory devices based on antiferromagnets.

中文翻译：

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全反铁磁多晶异质界面全向交换偏压的观察

由于具有可显着提高自旋电子学性能的有前途的功能，反铁磁体成为开发下一代有源元件以取代铁磁体的深入研究的主题。特别是，最近使用手性反铁磁体进行隧道磁阻和电开关的实验演示引发了人们对将反铁磁材料实际集成到器件架构中的期望。为了进一步开发在全反铁磁器件中操纵磁各向异性的技术，有必要通过反铁磁多层之间的界面实现交换偏置。在这里，报告了对全反铁磁多晶异质界面全向交换偏压的首次观察。该实验表明，引起手性反铁磁体Mn ₃ Sn/共线反铁磁体MnN层之间交换偏差的界面能与室温下传统铁磁体/反铁磁体界面处发现的界面能相当。与之前使用铁磁体的报道形成鲜明对比的是，由于反铁磁多层中不存在形状各向异性，单向各向异性的磁场控制被发现是全向的。非晶模板上多晶反铁磁体之间界面处全向交换偏压的实现，与现有硅基器件高度兼容，为开发基于反铁磁体的超低功耗、超高速存储器件铺平了道路。