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MBE-Grown MgO Thin Film Vacuum Ultraviolet Photodetector with Record High Responsivity of 3.2 A/W Operating at 400 °C
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-26 , DOI: 10.1109/led.2024.3381114
Lianjie Xin 1 , Kewei Liu 1 , Yongxue Zhu 1 , Jialin Yang 1 , Zhen Cheng 1 , Xing Chen 1 , Binghui Li 1 , Lei Liu 1 , Dezhen Shen 1
Affiliation  



中文翻译:

MBE 生长的氧化镁薄膜真空紫外光电探测器具有 3.2 A/W 的创纪录高响应度,工作温度为 400 °C

更新日期:2024-03-26
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