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Enhanced Performance and Stability of Atomic Layer Deposited In2O3 Transistors with Multi-Function Cation-Doped ZnSnO Layers
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-26 , DOI: 10.1109/led.2024.3381199 Qiaoji Zhu 1 , Yi Huang 1 , Jianting Wu 1 , Min Guo 1 , Hai Ou 1 , Baiquan Liu 1 , Xubing Lu 2 , Jun Chen 1 , Xiaoci Liang 1 , Qian Wu 3 , Chuan Liu 1
中文翻译：
具有多功能阳离子掺杂 ZnSnO 层的原子层沉积 In2O3 晶体管的增强性能和稳定性
更新日期：2024-03-26
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2024-03-26 , DOI: 10.1109/led.2024.3381199 Qiaoji Zhu 1 , Yi Huang 1 , Jianting Wu 1 , Min Guo 1 , Hai Ou 1 , Baiquan Liu 1 , Xubing Lu 2 , Jun Chen 1 , Xiaoci Liang 1 , Qian Wu 3 , Chuan Liu 1
Affiliation
中文翻译：
具有多功能阳离子掺杂 ZnSnO 层的原子层沉积 In2O3 晶体管的增强性能和稳定性
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