In this study, the resistive switching phenomenon and synaptic mimicry characteristics of an indium tin oxide (ITO)/indium zinc oxide (IZO)/Al2O3/TaN device are characterized. The insertion of a thin Al2O3 layer via atomic layer deposition improves the resistive switching characteristics such as cycle‐to‐cycle and device‐to‐device uniformity and reduces the power consumption of the proposed device with respect to a single‐layer ITO/IZO/TaN device. The proposed device exhibits the coexistence of volatile and nonvolatile characteristics under optical and electrical measurement conditions. Nonvolatile memory characteristics with stable retention results are used for synaptic applications by emulating potentiation, depression, and spike‐timing‐dependent plasticity. Furthermore, the device shows volatile characteristics under ultraviolet‐light illumination, emulating paired‐pulse facilitation and excitatory post‐synaptic current responses. Finally, optical‐enhanced reservoir computing is implemented based on the nonlinear and volatile nature of the IZO‐based resistive random‐access memory device.

中文翻译：

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用于储层计算的 InZnO 突触装置中电和光刺激控制的长期和短期记忆特性

在本研究中，氧化铟锡（ITO）/氧化铟锌（IZO）/Al的阻变现象和突触拟态特性2氧3/TaN 器件进行了表征。插入薄铝2氧3通过原子层沉积的层改进了电阻开关特性，例如周期间和器件间的均匀性，并降低了所提出器件相对于单层 ITO/IZO/TaN 器件的功耗。所提出的装置在光学和电学测量条件下表现出挥发性和非挥发性特性的共存。通过模拟增强、抑制和尖峰时序依赖性可塑性，具有稳定保留结果的非易失性记忆特性可用于突触应用。此外，该器件在紫外线照射下表现出不稳定的特性，模拟成对脉冲促进和兴奋性突触后电流响应。最后，基于 IZO 电阻式随机存取存储器件的非线性和易失性特性，实现了光学增强储层计算。