In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation‐induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV‐characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

中文翻译：

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离子注入 4H-SiC PIN 二极管具有极高的面内磁场灵敏度

在这项研究中，报道了离子注入横向 4H-SiC pin 二极管，其显示出出乎意料的高室温面内磁场灵敏度，在 0.5 特斯拉时接近 100%。使用专用的 TCAD 模拟研究了潜在的转导机制，并揭示了注入诱导的载流子陷阱对观察到的高灵敏度的影响。该研究表明，这种陷阱如何能够极大地控制高掺杂注入区域的注入条件，为表现出上述高磁场灵敏度的 pin 二极管的 IV 特性中观察到的部分提供了合理的解释。