Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI₃ FETs arises not only from the oxidation of Sn²⁺ but also from the migration of FA⁺ ions. The formation of hydrogen bonding between FA⁺ and F⁻ ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm² V⁻¹ s⁻¹ with an I_on/off ratio of 10⁷ is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.

中文翻译：

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通过抑制有机阳离子迁移的氢键提高锡基钙钛矿场效应晶体管的稳定性和性能

离子迁移对钙钛矿晶体管提出了重大挑战，对磁滞和运行稳定性产生不利影响。本研究重点阐明离子迁移对锡基钙钛矿场效应晶体管（FET）性能的影响。结果表明，FASnI ₃ FET 中的高背景载流子密度不仅源于 Sn ^{2+的氧化，还源于 FA +}离子的迁移。 FA ⁺和 F ^-离子之间形成氢键，有效抑制离子迁移，从而降低背景载流子密度并提高晶体管的工作稳定性。将氢键策略扩展到氟取代添加剂以提高器件性能。将 4-氟苯乙基碘化铵添加剂纳入 FET 中可显着减少循环测量期间开启电压的变化。值得注意的是，实现了高达30 cm ² V ^-1 s ^-1的有效迁移率以及10 ^7的I_开/关比。这些发现对于推进电子领域锡基钙钛矿技术具有广阔的前景。